报告题目：The device physics of TFET assisted by bound charge engineering

报告人：Guo Hong，加拿大皇家科学院院士

报告时间：2022年6月24日上午9:30~10:20

报告地点：Zoom（线上） MeetingID：87363393779 Passcode：046539

也可以通过下面的会议链接直接加入Zoom会议：https://mcgill.zoom.us/j/87363393779?pwd=V3pSaWF2RDZ3cEdIMGt1ZEdjTDZxQT09

线下地点：沧海校区致原楼1007

报告摘要：

Moore's “law” is the observation that the number of transistors in an integrated circuit doubles roughly every eighteen months. This was reasonably accurate for several decades and has been very useful for industry to guide long-term developments. In recent years, however, discussion has been shifted to the “end of the Moore’s law”, as transistor scaling approaches the physical limit. Among the most critical issues facing the transistor technology, the problem of power consumption stands out due to the scaling limit of the supply voltage. Namely, the device principle of MOSFET dictates a subthreshold swing (SS) limit of 60 mV/decade at room temperature, which is a physical limit that cannot be broken - regardless of the channel material, length, or device structure. This physical limit prevents today's MOSFET from further reducing its power dissipation and is the dominating reason for the “end of the Moore’s law”. Solving this problem is of ultimate urgency for integrated circuits.

In this seminar, I shall briefly review several device physics ideas and analysis of novel field effect transistors (FETs) that break the thermal limit of SS thereby achieving low-power operation for high performance computing. Focus will be put on our new proposal of bound-charge engineered (BCE) tunnel-FET (TFET). We demonstrate that BCE can very effectively alleviate the major issue of weak electrostatic screening in low-dimensional electronic systems such as silicon nanowires which is detrimental to the performance and scalability of nanodevices. By atomistic quantum transport simulations, we show how bound charges can be engineered at interfaces of Si and low-κ oxides to strengthen screening. To avoid compromising gate control, low-κ and high-κ oxides are used in conjunction. In Si nanowire TFETs, we demonstrate that bound charge engineering increases the on-state current by orders of magnitude, and the combination of oxides yields minimal subthreshold swing. We conclude that the proposed bound-charge engineering paves a way toward improved low-power transistors.

主讲嘉宾简介：

郭鸿，麦吉尔大学讲座教授，加拿大皇家科学院院士，美国物理学会会士，深圳大学访问教授。1976年四川师范大学本科，1981年通过CUSPEA赴美留学，获匹兹堡大学博士学位，研究领域：纳米电子输运理论、材料物理和计算物理等。论文入选Physical Review B杂志五十年里程碑式论文。

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