报告人：管闪 青年研究员（中科院半导体研究所）

时　间：2024年5月24日下午2：30

地　点：粤海校区致原楼1007

摘要：

The spin-orbit coupling (SOC) effect is the key to realizing non-magnetic quantum spin devices. Recently, hole-based spin qubits in Ge/SiGe heterostructures have achieved rapid progress. However, the microscopic mechanism for manipulating Ge hole spin qubits via electric-dipole spin resonance mediated by SOC remains ambiguous. On the other hand, the discovery of hidden spin polarization (HSP) provides new design principles for building novel electrically tunable devices. In this talk, I will show a novel linear Rashba SOC recently revealed in two-dimensional hole gases of Ge/Si quantum wells, and clarify its important role underlying the physical mechanism for ultra-fast all-electric control of Ge hole qubits [1,2]. I will also discuss our recent findings on HSP, including the electrical non-volatile control of strong HSP in antiferroelectric materials, and the proposal of hidden Zeeman-type spin polarization [3,4].

参考文献：

[1]. Y. Liu, J. X. Xiong, Z. Wang, W. L. Ma, S. Guan, J. W. Luo, and S. S. Li. Emergent linear Rashba spin-orbit coupling offers fast manipulation of hole-spin qubits in germanium, Physical Review B, 2022, 105(7): 075313.

[2]. J. X. Xiong, S. Guan, J. W. Luo, and S. S. Li. Emergence of strong tunable linear Rashba spin-orbit coupling in two-dimensional hole gases in semiconductor quantum wells, Physical Review B, 2021, 103(8): 085309.

[3]. S. Guan, J. W. Luo, S. S. Li, and A. Zunger. Hidden Zeeman-type spin polarization in bulk crystals, Physical Review B, 2023, 107(8): L081201.

[4]. S. Guan, and J. W. Luo. Electrically switchable hidden spin polarization in antiferroelectric crystals, Physical Review B, 2020, 102(18): 184104.

报告人简介：

管闪，中国科学院半导体研究所青年研究员，2018年于北京理工大学获得博士学位，2014~2017 年于新加坡科技设计大学量子材料理论室访问学习。2018年入职半导体超晶格国家重点实验室任助理研究员，2023年入选研究所青年研究员计划。研究方向为计算半导体物理，主要通过第一性原理计算方法结合模型分析，研究半导体中新型自旋轨道耦合效应及其量子器件物理。迄今发表包括PRL、PRB在内的论文共计40余篇，引用2500余次。长期担任PRL、Nat. Commu.等杂志审稿人。